Dr. BOUGUENNA Driss بوقنة دريس
Faculté des Sciences et de la Technologie
Département Tronc commun
Grade : Maitre de conférence classe A
Numéro de Téléphone :
Adresse électronique institutionnel
Adresse électronique personnel
Adresse postale :
70 Logts, cité Univ Sidi Said,29000 Mascara, Algérie
Laboratoire de Géomatique, Ecologie et Environnement
Lien Google Scholar :
Lien Researchgate:


Parcours académique :

BOUGUENNA Driss received a degree in electronics engineering (Microelectronics) from the University of Abdel Hamid Iben Badis Mostaganem in 2002 and Master thesis (Magister) degree in Physics (Micro-optoelectronics) from the University of Oran 1 Ahmed Ben Bella in 2006. He received the PhD degree in Electronics (Micro-optoelectronics) from the University of Science and Tcchnology of Oran in 2014. Since 2007, he is a titular research Professor in the Department of Science and Technology (ST), Faculty of Science and Technology at the University Mustapha STAMBOULI of Mascara. For his research contributions to materials science, modeling and simulation of electronics devices in electrical engineering.

Axes et thèmes de recherche

  • Modeling and simulation electronics devices,
  • Materials science and computational physics.

  • Ouvrages individuels/Ouvrages collectifs

  • Mécanique du Point Matériel, Cours et exercices corrigés

  • Auteur : BOUGUENNA Driss
  • Date d'edition :
  • Resume :
  • Tests de Physique 1 et Physique 2 avec corrigés types

  • Auteur : BOUGUENNA Driss
  • Date d'edition : 13/12/2019
  • Resume :

  • Projets de recherche

  • Description: PRFU
  • Code de projet: B00L02UN290120180001
  • Agrées le : en 2018-01-01

  • Publications

  • A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/ InxAl1−xN/AlN/GaN MOS-HEMTs
  • La revue : Journal of Electronic Materials
    Domaine :
    Mots Clés :
    Auteur : Abbes Beloufa, Driss Bouguenna, Nawel Kermas & Donat Josef As
    Issn : 0361-5235 Eissn : vol : , Num : , pp :
  • Date de publication : 2020-01-02
  • Computational investigation of CrFeZ [Z = Si, Sn and Ge] half-Heusler compounds ferromagnets
  • La revue : Physica B : Condensed Matter
    Domaine : Physics
    Mots Clés : Half-Heusler, ab initio, Electronic, Magnetic, Mechanic properties
    Auteur : Beloufa Abbès, Benaoumeur Bakhti, Driss Bouguenna, Mohammed Reda Chellali
    Issn : 0921-4526 Eissn : 1873-2135 vol : 563, Num : 15, pp : 50–55
  • Date de publication : 2019-06-15
  • Résume :
    The structural, electronic, magnetic and mechanical properties of the ternary CrFeZ half-Heusler compounds (with Z = Si, Sn, Ge) have been determined ab initio using a full-potential linearized muffin tin orbital approach. Equilibrium properties such as lattice constant, bulk modulus and its pressure derivative are calculated. Spin-orbit interaction effect in the electronic structure and Fermi levels are revealed. The majority-spin electrons are found to be metallic in nature, while the minority-spin electrons are found to be semiconducting electronic band-structure. It is shown that calculated band structures, density of states, magnetic moments, and elastic constants of these alloys agree well with available with theoretical and experimental data. In addition, the investigated compounds are found to be mechanical stable. Our findings predict new properties, as-yet unreported elastic parameters in the C1b structure, and thus may be realized under ideal experimental circumstances, which make them potential candidates for future spintronic applications.

  • Compact mole-fraction dependent modeling of I-V and C-V characteristics in AlxGa1-xN/GaN HEMTs
  • La revue : Journal of Computational Electronics
    Domaine : Electronic
    Mots Clés : I-V and C-V characteristics, Transconductance, AlxGa1−xN/GaN, HEMTs, Mole fraction, Threshold voltage, Numerical simulation, Atlas TCAD simulator
    Auteur : Nawel Kermas, Bouaza Djellouli, Driss Bouguenna*, Wondwosen Eshetu, Oana Moldovan and Benjamin Iñiguez
    Issn : 1569-8025 Eissn : 1572-8137 vol : 17, Num : 1, pp : 224–229
  • Date de publication : 2017-04-15
  • Fuzzy sliding mode control for synchronous machine
  • La revue : Revue Roumaine des Sciences Techniques - Serie Électrotechnique et Énergétique
    Domaine : Électrotechnique et Énergétique
    Mots Clés : Machine synchrone à aimant permanent (MSAP), Contrôle robuste, Régulateur hybride par mode glissant, Commande par logique floue (CLF), Commande par mode glissant (SMC), Régulateur mode glissant floue (RMGF) (Permanent magnet synchronous motor (PMSM), Robust control, Sliding mode hybrid regulator, Fuzzy logic control (FLC), Sliding mode control (SMC), F
    Auteur : Ahmed Larbaoui, Baghdad Belabbes, Abdelkader Meroufel, Driss Bouguenna
    Issn : Eissn : 0035-4066 vol : 62, Num : 2, pp : 192-196
  • Date de publication : 2017-04-15
  • Numerical analysis of transmission coefficient, LDOS and DOS in superlattice nanostructures of cubic AlxGa1-xN/GaN resonant tunneling MODFETs
  • La revue : Journal of Computational Electronics
    Domaine : Electronic
    Mots Clés : Transmission coefficient • Density of states • Local density of states • Cubic AlxGa1−xN/GaN • Superlattice • Nanostructures • MODFETs • nextnano3
    Auteur : D. Bouguenna*, T. Wecker, D.J. As, N. Kermas and A. Beloufa
    Issn : 1569-8025 Eissn : 1572-8137 vol : 15, Num : 4, pp : 1269–1274
  • Date de publication : 2016-08-25
  • Résume :
    Numerical analysis of the transmission coefficient, local density of states, and density of states in superlattice nanostructures of cubic AlxGa1−xN/GaN resonant tunneling modulation-doped field-effect transistors (MODFETs) using nextnano3 software and the contact block reduction method is presented. This method is a variant of non-equilibrium Green’s function formalism, which has been integrated into the nextnano3 software package. Using this formalism in order to model any quantum devices and estimate their charge profiles by computing transmission coefficient, local density of states (LDOS) and density of states (DOS). This formalism can also be used to describe the quantum transport limit in ballistic devices very efficiently. In particular, we investigated the influences of the aluminum mole fraction and the thickness and width of the cubic AlxGa1−xN on the transmission coefficient. The results of this work show that, for narrow width of 5 nm and low Al mole fraction of x=20% of barrier layers, cubic AlxGa1−xN/GaN superlattice nanostructures with very high density of states of 407 eV−1 at the resonance energy are preferred to achieve the maximum transmission coefficient. We also calculated the local density of states of superlattice nanostructures of cubic AlxGa1−xN/GaN to resolve the apparent contradiction between the structure and manufacturability of new-generation resonant tunneling MODFET devices for terahertz and high-power applications.

  • Examples of Shrinkage Estimators of the Mean, Dominating the Maximum Likelihood Estimator in Larges Dimension
  • La revue : IOSR Journal of Mathematics (IOSR-JM)
    Domaine : Mathematics
    Mots Clés : ames-Stein estimator, multivariate normal distribution, non-central chi-square distribution, quadratic risk, shrinkage estimator.
    Auteur : Abdenour Hamdaoui, Nadia Mezouar, Djamel Benmansour, and Driss Bouguenna*
    Issn : Eissn : 2278-5728 vol : 12, Num : 3, pp : 14-28
  • Date de publication : 2016-05-15
  • High performance of cubic AlxGa1-xN/GaN Double Gate MOS-HEMTs
  • La revue : International Research Journal of Engineering and Technology (IRJET)
    Domaine : Electronic
    Mots Clés : cubic AlxGa1-xN/GaN, InP/InyGa1-yAs, device simulation, DG MOSFET, DG MOS-HEMT, nextnano3.
    Auteur : Driss Bouguenna*, Nawel Kermas, Bouaza Djellouli
    Issn : 2320-3331 Eissn : 2395 -0056 vol : 2, Num : 9, pp : 2072-2077
  • Date de publication : 2015-12-01
  • Résume :
    In this paper, we have compared the performance of cubic AlxGa1-xN/GaN and InP/InyGa1- yAs DG MOS-HEMTs, by analyzing the impact of gate length (LG) using 2D nextnano3 software. Driftdiffusion model was taken for simulating the proposed device. The gate length was varied from (12 to 18) nm in a step of 3 nm. As gate length is reduced for scaling, higher drain current is observed, again as Indium content y of channel layer InyGa1-yAs is increased, there is an increase in drain current density, while threshold voltage is decrease comparable to InP/InyGa1-yAs DG MOS-HEMT. Except drain current density and threshold voltage all other parameters are acceptable, a needful to improve the two parameters. However, the proposed model of cubic AlxGa1-xN/GaN DG MOS-HEMT is the ultimate to replace InP/InyGa1-yAs DG MOS-HEMT and MOSFET for next-generation microwave and power switching application fields in the future.

  • Backstepping control with integral action of PMSM integrated according to the MRAS observer
  • La revue : IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
    Domaine : Electrotechnic
    Mots Clés : Backstepping control, Lyapunov theorem, Integral action, Permanent Magnet Synchronous Motor (PMSM), Model Reference Adaptive System (MRAS), observer
    Auteur : A. Larbaoui, B. Belabbes, A. Meroufel, A. Tahour, and D. Bouguenna*
    Issn : 2320-3331 Eissn : vol : 9, Num : 4, pp : 59-68
  • Date de publication : 2014-07-01
  • Résume :
    The work developed in this article, has aims to control design law is based on Backstepping method to ensure the servo-control of the permanent magnet synchronous motors (PMSM). The slow convergence of adaptation can result, in some cases; irreversible instabilization loop, especially in the presence of nonlinearity and/or couplings. Hence, the Backstepping method coupled with introduction of integral actions is an alternative choice. Moreover, the Backstepping theory is a recursive design methodology that makes use of the Lyapunov stability theory. Strong properties of overall and asymptotic stability can be achieved. The second part of this work is a direct application of the control proposed to associate an observer, is the Model Reference Adaptive System (MRAS) to observe the position and the rotor speed of the MRAS. Furthermore, the simulation under the Matlab/Simulink software allows highlighting the performance of the control strategy adopted

  • Comparative study on performance of cubic AlxGa1-xN/GaN nanostructures MODFETs and MOS-MODFETs
  • La revue : Superlattices and Microstructures
    Domaine : Electronic
    Mots Clés : Cubic AlxGa1−xN/GaN, NanostructuresDevice simulationMODFETMOS-MODFETNextnano3
    Auteur : Driss Bouguenna*, A. Boudghene Stambouli, A. Zado, D.J. As, N. Mekkakia Maaza,
    Issn : 0749-6036 Eissn : 1096-3677 vol : 62, Num : , pp : 260-268
  • Date de publication : 2013-10-15
  • Résume :
    We report some comparative results on cubic AlxGa1−xN/GaN nanostructures MODFET and MOS-MODFET. The drain current characteristics of cubic AlxGa1−xN/GaN MODFET and MOS-MODFET are simulated by changing the different device parameters such as Al content x and the cubic GaN buffer layer thickness using 2D nextnano3 numerical simulation software. Drift–diffusion model has taken for simulating the proposed device. These results clearly indicate that the transistor simulation with 5 nm isolator SiO2 layer thickness under the gate, Al content of x = 25% and 200 nm cubic GaN buffer layer thickness shows the tremendous I–V characteristics. Also, this structure shows an increase of the drain saturation current and a decrease in the threshold voltage. Moreover, our simulation results exhibited lower threshold voltage and higher drain current density of MOS-MODFET is a factor 30% higher than the same current of a conventional MODFET. The MODFET with 5 nm isolator SiO2 layer thickness has been much better performance. To avoid current flow through the high conductive 3C-SiC substrate a 150 nm p-doped cubic GaN layer is deposited. A comparison between our experimental and simulation results are shown to be in good agreement for cubic Al0.25Ga0.75N/GaN nanostructures MOS-MODFET. The demonstrated MOS-MODFET will be attractive for the next-generation microwave and high power switching application fields.

  • 2D Simulations of current-voltage characteristics of cubic AlxGa1-xN/GaN Modulation Doped Hetero-junction Field Effect Transistor structures
  • La revue : Electrical and Electronic Engineering
    Domaine : Electronic
    Mots Clés : Cubic AlxGa1-xN/GaN, MODFET, Δ-doping, Drain Current, Threshold Voltage, Nextnano3
    Auteur : Driss Bouguenna*, A. Boudghene Stambouli, A. Zado, D.J. As, N. Mekkakia Maaza,
    Issn : 1844-6035 Eissn : 2067-2128 vol : 2, Num : 5, pp : 309-315
  • Date de publication : 2012-08-11

  • Communications

  • Lieu de communication : Lloc: Sala 331 del DEEEA, Universitat:Universitat Rovira i Virgili, SPANYA
  • date debut : 2015-10-23
  • date fin : 2015-10-23
  • Lieu de communication : University of BADJI Mokhtar-Annaba
  • date debut : 2016-05-10
  • date fin : 2016-05-10
  • Lieu de communication : University of Oran Es-Senia-Oran
  • date debut : 2005-12-13
  • date fin : 2005-12-13
  • Lieu de communication : Algiers, Algeria
  • date debut : 2016-10-18
  • date fin : 2016-10-18
  • Lieu de communication : University of Batna, Algeria
  • date debut : 2016-10-02
  • date fin : 2016-10-02
  • Lieu de communication : University of BADJI Mokhtar-Annaba
  • date debut : 2016-05-11
  • date fin : 2016-05-11
  • Lieu de communication : Université des Sciences et de la Technologie d'Oran-Mohammed Boudiaf.
  • date debut : 2007-12-02
  • date fin : 2007-12-02
  • Lieu de communication : Université d’Oran Es-Senia, Oran
  • date debut : 2005-12-13
  • date fin : 2005-12-13

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