BOUGUENNA Driss received a degree in electronics engineering (Microelectronics) from the University of Abdel Hamid Iben Badis Mostaganem in 2002 and Master thesis (Magister) degree in Physics (Micro-optoelectronics) from the University of Oran 1 Ahmed Ben Bella in 2006. He received the PhD degree in Electronics (Micro-optoelectronics) from the University of Science and Tcchnology of Oran in 2014. Since 2007, he is a titular research Professor in the Department of Science and Technology (ST), Faculty of Science and Technology at the University Mustapha STAMBOULI of Mascara. For his research contributions to materials science, modeling and simulation of electronics devices in electrical engineering.
La revue : Physica B : Condensed Matter
Domaine : Physics
Mots Clés : Half-Heusler, ab initio, Electronic, Magnetic, Mechanic properties
Auteur : Beloufa Abbès, Benaoumeur Bakhti, Driss Bouguenna, Mohammed Reda Chellali
Issn : 0921-4526 Eissn : 1873-2135 vol : 563, Num : 15, pp : 50–55
Date de publication : 2019-06-15
Résume : The structural, electronic, magnetic and mechanical properties of the ternary CrFeZ half-Heusler compounds (with Z = Si, Sn, Ge) have been determined ab initio using a full-potential linearized muffin tin orbital approach. Equilibrium properties such as lattice constant, bulk modulus and its pressure derivative are calculated. Spin-orbit interaction effect in the electronic structure and Fermi levels are revealed. The majority-spin electrons are found to be metallic in nature, while the minority-spin electrons are found to be semiconducting electronic band-structure. It is shown that calculated band structures, density of states, magnetic moments, and elastic constants of these alloys agree well with available with theoretical and experimental data. In addition, the investigated compounds are found to be mechanical stable. Our findings predict new properties, as-yet unreported elastic parameters in the C1b structure, and thus may be realized under ideal experimental circumstances, which make them potential candidates for future spintronic applications.
La revue : Journal of Computational Electronics
Domaine : Electronic
Mots Clés : Transmission coefficient • Density of states • Local density of states • Cubic AlxGa1−xN/GaN • Superlattice • Nanostructures • MODFETs • nextnano3
Auteur : D. Bouguenna*, T. Wecker, D.J. As, N. Kermas and A. Beloufa
Issn : 1569-8025 Eissn : 1572-8137 vol : 15, Num : 4, pp : 1269–1274
Date de publication : 2016-08-25
Résume : Numerical analysis of the transmission coefficient, local density of states, and density of states in superlattice nanostructures of cubic AlxGa1−xN/GaN resonant tunneling modulation-doped field-effect transistors (MODFETs) using nextnano3 software and the contact block reduction method is presented. This method is a variant of non-equilibrium Green’s function formalism, which has been integrated into the nextnano3 software package. Using this formalism in order to model any quantum devices and estimate their charge profiles by computing transmission coefficient, local density of states (LDOS) and density of states (DOS). This formalism can also be used to describe the quantum transport limit in ballistic devices very efficiently. In particular, we investigated the influences of the aluminum mole fraction and the thickness and width of the cubic AlxGa1−xN on the transmission coefficient. The results of this work show that, for narrow width of 5 nm and low Al mole fraction of x=20% of barrier layers, cubic AlxGa1−xN/GaN superlattice nanostructures with very high density of states of 407 eV−1 at the resonance energy are preferred to achieve the maximum transmission coefficient. We also calculated the local density of states of superlattice nanostructures of cubic AlxGa1−xN/GaN to resolve the apparent contradiction between the structure and manufacturability of new-generation resonant tunneling MODFET devices for terahertz and high-power applications.
La revue : International Research Journal of Engineering and Technology (IRJET)
Domaine : Electronic
Mots Clés : cubic AlxGa1-xN/GaN, InP/InyGa1-yAs, device simulation, DG MOSFET, DG MOS-HEMT, nextnano3.
Auteur : Driss Bouguenna*, Nawel Kermas, Bouaza Djellouli
Issn : 2320-3331 Eissn : 2395 -0056 vol : 2, Num : 9, pp : 2072-2077
Date de publication : 2015-12-01
In this paper, we have compared the performance of cubic AlxGa1-xN/GaN and InP/InyGa1-
yAs DG MOS-HEMTs, by analyzing the impact of gate length (LG) using 2D nextnano3 software. Driftdiffusion model was taken for simulating the proposed device. The gate length was varied from (12 to 18) nm in a step of 3 nm. As gate length is reduced for scaling, higher drain current is observed, again as Indium content y of channel layer InyGa1-yAs is increased, there is an increase in drain current density, while threshold voltage is decrease comparable to InP/InyGa1-yAs DG MOS-HEMT. Except drain current density and threshold voltage all other parameters are acceptable, a needful to improve the two parameters. However, the proposed model of cubic AlxGa1-xN/GaN DG MOS-HEMT is the ultimate to replace InP/InyGa1-yAs DG MOS-HEMT and MOSFET for next-generation microwave and power switching application fields in the future.
La revue : IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
Domaine : Electrotechnic
Mots Clés : Backstepping control, Lyapunov theorem, Integral action, Permanent Magnet Synchronous Motor (PMSM), Model Reference Adaptive System (MRAS), observer
Auteur : A. Larbaoui, B. Belabbes, A. Meroufel, A. Tahour, and D. Bouguenna*
Issn : 2320-3331 Eissn : vol : 9, Num : 4, pp : 59-68
Date de publication : 2014-07-01
Résume : The work developed in this article, has aims to control design law is based on Backstepping method to ensure the servo-control of the permanent magnet synchronous motors (PMSM). The slow convergence of adaptation can result, in some cases; irreversible instabilization loop, especially in the presence of nonlinearity and/or couplings. Hence, the Backstepping method coupled with introduction of integral actions is an
alternative choice. Moreover, the Backstepping theory is a recursive design methodology that makes use of the
Lyapunov stability theory. Strong properties of overall and asymptotic stability can be achieved. The second part of this work is a direct application of the control proposed to associate an observer, is the Model Reference Adaptive System (MRAS) to observe the position and the rotor speed of the MRAS. Furthermore, the simulation under the Matlab/Simulink software allows highlighting the performance of the control strategy adopted
La revue : Superlattices and Microstructures
Domaine : Electronic
Mots Clés : Cubic AlxGa1−xN/GaN, NanostructuresDevice simulationMODFETMOS-MODFETNextnano3
Auteur : Driss Bouguenna*, A. Boudghene Stambouli, A. Zado, D.J. As, N. Mekkakia Maaza,
Issn : 0749-6036 Eissn : 1096-3677 vol : 62, Num : , pp : 260-268
Date de publication : 2013-10-15
Résume : We report some comparative results on cubic AlxGa1−xN/GaN nanostructures MODFET and MOS-MODFET. The drain current characteristics of cubic AlxGa1−xN/GaN MODFET and MOS-MODFET are simulated by changing the different device parameters such as Al content x and the cubic GaN buffer layer thickness using 2D nextnano3 numerical simulation software. Drift–diffusion model has taken for simulating the proposed device. These results clearly indicate that the transistor simulation with 5 nm isolator SiO2 layer thickness under the gate, Al content of x = 25% and 200 nm cubic GaN buffer layer thickness shows the tremendous I–V characteristics. Also, this structure shows an increase of the drain saturation current and a decrease in the threshold voltage. Moreover, our simulation results exhibited lower threshold voltage and higher drain current density of MOS-MODFET is a factor 30% higher than the same current of a conventional MODFET. The MODFET with 5 nm isolator SiO2 layer thickness has been much better performance. To avoid current flow through the high conductive 3C-SiC substrate a 150 nm p-doped cubic GaN layer is deposited. A comparison between our experimental and simulation results are shown to be in good agreement for cubic Al0.25Ga0.75N/GaN nanostructures MOS-MODFET. The demonstrated MOS-MODFET will be attractive for the next-generation microwave and high power switching application fields.